| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F30-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F17-5045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66977
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F17-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c5813af1be97e17969c5cea6a57d342
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffcf1288ba4e5b8f5aae932c5e1b0082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5412e31f882c6ce975f30bbb2ee2a8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95fb0f2ec19bfd38319bcf6429b7ad14 |
| publicationDate |
2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015084091-A1 |
| titleOfInvention |
Tunnel field-effect transistors with a gate-swing broken-gap heterostructure |
| abstract |
Device structures, fabrication methods, and design structures for tunnel field-effect transistors. A drain comprised of a first semiconductor material having a first band gap and a source comprised of a second semiconductor material having a second band gap are formed. A tunnel barrier is formed between the source and the drain. The second semiconductor material exhibits a broken-gap energy band alignment with the first semiconductor material. The tunnel barrier is comprised of a third semiconductor material with a third band gap larger than the first band gap and larger than the second band gap. The third band gap is configured to bend under an external bias to assist in aligning a first energy band of the first semiconductor material with a second energy band of the second semiconductor material |
| priorityDate |
2013-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |