| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fac633f32bf06d835dbe9f0a5e199c20 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-042 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-187 |
| filingDate |
2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2affc47077b7505e31e4ca8383c0dcc |
| publicationDate |
2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015078410-A1 |
| titleOfInvention |
Vertical cavity surface emitting laser device |
| abstract |
A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminium molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL. Thus, proposed VCSEL device maintains lower junction temperature for achieving stable high-speed operations at high ambient temperature, thereby improving its performance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111758193-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3800751-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112534660-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110197992-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106683168-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11362486-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017212321-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10008826-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3732757-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133630-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021003643-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019133655-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11165222-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019214788-A1 |
| priorityDate |
2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |