Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_962adbf7d50e742218f3d536a63df612 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C39-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-817 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-08 |
filingDate |
2013-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90057506414fdb51a7489d33221513ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e15b8d82d25d2e804aae1c74cdd1e96 |
publicationDate |
2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015075578-A1 |
titleOfInvention |
Thermoelectric conversion material and method for manufacturing same |
abstract |
The present invention provides a thermoelectric conversion material having a reduced thermal conductivity and having an improved figure of merit, and a method for producing the material. The thermoelectric conversion material has, as formed on a resin substrate having recesses, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the resin substrate comprises one formed by curing a resin layer of a curable resin composition. The production method for the thermoelectric conversion material comprises a resin substrate formation step of transcribing a protruding structure from an original plate having the protruding structure onto a resin layer of a curable resin composition and curing the layer, and a film formation step of forming a thermoelectric semiconductor layer of a thermoelectric semiconductor material on the resin substrate. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431593-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600947-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11299980-B2 |
priorityDate |
2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |