| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8a1b0bb67565b77b26e229b43725882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4fff4d2e918f2d8409f97da5606f088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20a645fb300ecc6c3e064e35f3de4fe5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7815f043980744f6f62a4fa320f7692a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db2f9143b3bdb27fb8b7dcc5afc9db67 |
| publicationDate |
2015-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015069395-A1 |
| titleOfInvention |
Smart Measurement Techniques to Enhance Inline Process Control Stability |
| abstract |
An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred. |
| priorityDate |
2013-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |