| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c142e57962f1e8e9a64926e72f1fd250 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate |
2013-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cf32845769aa7ab545e81bb93a4d40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f22341cbbff87355246a5384d0828908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73ee30f1fa77b4f7b7e24a8d2fa62787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7b1b40cf81a1f2210a003cc06adc9e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_494ccb76fda4dfea4de39b00369b2498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35d730743e03ad78bec627c923ed7c93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_936b13559e7d61a899653e88d78acca1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f9e5137270be8b432e93efd60a37fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e0294b56ed204aad67a89a16d0fa5ba |
| publicationDate |
2015-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015060909-A1 |
| titleOfInvention |
Light-emitting device and the manufacturing method thereof |
| abstract |
A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern. |
| priorityDate |
2013-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |