| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823443
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fc6e82fcaf3845ddf46219ac0775073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12cfa580567ae8fc9b1008d8eb5d5b5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f71ca624156887534a88b894501d18cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01e72bd329efcad1a8aada62f1689acd |
| publicationDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015054084-A1 |
| titleOfInvention |
SILICIDE FORMATION DUE TO IMPROVED SiGe FACETING |
| abstract |
An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is epitaxially formed in the source/drain regions, so that that a top edge of the SiGe semiconductor material at the field oxide does not extend more than one third of a depth of the SiGe in the source/drain region abutting the field oxide. Dielectric spacers on lateral surfaces of the gate structure on the field oxide extend onto the SiGe; at least one third of the SiGe is exposed. Metal silicide covers at least one third of a top surface of the SiGe. A contact has at least half of a bottom of the contact directly contacts the metal silicide on the SiGe. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11410993-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202883-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508626-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793399-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10796968-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11232945-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406769-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011616-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I715695-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016020324-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019164846-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10840151-B2 |
| priorityDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |