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publicationDate 2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015053991-A1
titleOfInvention Transistor having an ohmic contact by gradient layer and method of making the same
abstract A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a gradient having a first concentration of a first material at an interface with the channel layer and a second concentration of the first material at a surface opposite the channel layer, and the first concentration is higher than the second concentration.
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