| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8711ea5c1b04a5bcf6e0a9686beb6686 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2013-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_296d86b19a605fcf248924c7cc17971d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e187ef4691a9b0cd494209b1e0dbdc9 |
| publicationDate |
2015-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015047699-A1 |
| titleOfInvention |
Thin film photovoltaic devices with a minimally conductive buffer layer |
| abstract |
A thin film photovoltaic device ( 100 ) with a tunable, minimally conductive buffer ( 128 ) layer is provided. The photovoltaic device ( 100 ) may include a back contact ( 150 ), a transparent front contact stack ( 120 ), and an absorber ( 140 ) positioned between the front contact stack ( 120 ) and the back contact ( 150 ). The front contact stack ( 120 ) may include a low resistivity transparent conductive oxide (TCO) layer ( 124 ) and a buffer layer ( 128 ) that is proximate to the absorber layer ( 140 ). The photovoltaic device ( 100 ) may also include a window layer ( 130 ) between the buffer layer ( 128 ) and the absorber ( 140 ). In some cases, the buffer layer ( 128 ) is minimally conductive, with its resistivity being tunable, and the buffer layer ( 128 ) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015207000-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017236956-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417785-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466744-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014246083-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022114026-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023054016-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7160232-B1 |
| priorityDate |
2012-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |