Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2013-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c68d462992f4f298092872f5a72eaef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f3ea1c9b4f85befb1761f8a88d5626 |
publicationDate |
2015-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015044880-A1 |
titleOfInvention |
Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program |
abstract |
A method of manufacturing a semiconductor device is provided, which enables the film quality to be improved when the film is formed on a substrate at a low temperature, thus forming fine patterns. The method of manufacturing a semiconductor device includes: forming the film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10435795-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016284542-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107871652-A |
priorityDate |
2012-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |