Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf83328d853bc7476ca10212837b3a01 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa21cc30e3467d13320465af81c0e7b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da3ec9aba2e9a03cad5c2c6556b83a59 |
publicationDate |
2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015035067-A1 |
titleOfInvention |
Low rdson device and method of manufacturing the same |
abstract |
A device and method of making thereof are disclosed. The device includes a substrate having a device region for a switch transistor. The device includes a switch transistor having a gate disposed on the substrate in the device region and first and second heavily doped regions disposed adjacent to the gate. The first heavily doped region serves as a source region of the switch transistor and the second heavily doped region serves as a drain region of the switch transistor. The drain region includes a lightly doped diffusion (LDD) region adjacent thereto and the source region is devoid of a LDD region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9830816-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10055989-B2 |
priorityDate |
2013-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |