Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2014-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate |
2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015034475-A1 |
titleOfInvention |
Method for forming oxide semiconductor film |
abstract |
A method for forming an oxide semiconductor film including the steps of making an ion collide with a target containing a crystalline In—Ga—Zn oxide to separate a sputtered particle including a flat-plate In—Ga—Zn oxide particle, and depositing it over a substrate while keeping crystallinity. The method is performed in a deposition chamber including the target and the substrate. In the case where the pressure in the deposition chamber is p and the distance between the target and the substrate is d, the product of the pressure p and the distance d is greater than or equal to 0.096 Pa·m when the atomic ratio of Zn to In in the target is less than or equal to 1; the product of the pressure p and the distance d is less than 0.096 Pa·m when the atomic ratio of Zn to In in the target is greater than or equal to 1. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892367-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109494147-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859117-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761733-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108474106-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10084096-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9508864-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109545687-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10546960-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10865470-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11702731-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3828303-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11352690-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916430-B2 |
priorityDate |
2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |