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publicationDate 2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015034475-A1
titleOfInvention Method for forming oxide semiconductor film
abstract A method for forming an oxide semiconductor film including the steps of making an ion collide with a target containing a crystalline In—Ga—Zn oxide to separate a sputtered particle including a flat-plate In—Ga—Zn oxide particle, and depositing it over a substrate while keeping crystallinity. The method is performed in a deposition chamber including the target and the substrate. In the case where the pressure in the deposition chamber is p and the distance between the target and the substrate is d, the product of the pressure p and the distance d is greater than or equal to 0.096 Pa·m when the atomic ratio of Zn to In in the target is less than or equal to 1; the product of the pressure p and the distance d is less than 0.096 Pa·m when the atomic ratio of Zn to In in the target is greater than or equal to 1.
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