| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31a589d4450cf7d57ff3f6203779003a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d002f604dd0fe5c3ec0c1b420bc76249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30acf58e38f46013f99f7264e966311c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04d19e4053a5f8b62642e0e77a6feab0 |
| publicationDate |
2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015028469-A1 |
| titleOfInvention |
Semiconductor assembly and method of manufacture |
| abstract |
A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon (Si), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685545-B2 |
| priorityDate |
2013-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |