| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_782aaa6ed63fe21ee889f72bec480d79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d5bf178ed683554c286759d5fba4c72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_26cdc7a461bea34053f98d40d069abb7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0242 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00103 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 |
| filingDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f6397801d4fb8250bbb6080f2419348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d243c902226309a96322155540490d93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efb3cc2e0647113ed12048fc8102275b |
| publicationDate |
2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015028438-A1 |
| titleOfInvention |
Mems device and process for producing same |
| abstract |
There are provided a process for fabricating MEMS device that includes a plurality of through-holes capable being arranged at a high density, the through-holes having a tapered end portion. Through-holes having vertical side surfaces and tapered bottoms are provided by a processing method including the steps of: disposing quadrilateral patterning having desired dimensions on a silicon substrate having a flat surface of a crystal plane, etching the substrate to a desired depth by dry etching that can realize a high aspect ratio etching, and anisotropic wet etching the dry etched substrate with a KOH aqueous solution containing isopropyl alcohol mixed thereinto. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11434129-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101823219-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110683507-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107539944-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105967140-A |
| priorityDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |