http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015027372-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb43af104d3a6bf54abc6c74cf800224 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
filingDate | 2013-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a1e4dd9f8c10fa3dde3851c939cb6f7 |
publicationDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2015027372-A1 |
titleOfInvention | Vapor Deposition Apparatus for Continuous Deposition of Multiple Thin Film Layers on a Substrate |
abstract | A vapor deposition apparatus to form stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through said apparatus is provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus and a second sublimation compartment positioned over a second deposition area of said apparatus. The first sublimation compartment is configured to heat a first source material therein to sublimate the first source material into first source material vapors. A movable first shutter plate within the first sublimation compartment is configured to control the flow rate of the first source material vapors therethrough. Similarly, the second sublimation compartment is configured to heat a second source material therein to sublimate the second source material into second source material vapors, and includes a movable first shutter plate configured to control the flow rate of the second source material vapors therethrough. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013143415-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114005905-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021257748-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11465224-B2 |
priorityDate | 2013-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.