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publicationDate 2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015021665-A1
titleOfInvention Transistor having back-barrier layer and method of making the same
abstract A transistor includes a substrate, a channel layer over the substrate, a back-barrier layer over the channel layer, and an active layer over the back-barrier layer. The back-barrier layer has a band gap discontinuity with the channel layer. The band gap of the active layer is less than the band gap of the back-barrier layer. A two dimensional electron gas (2-DEG) is formed in the channel layer adjacent an interface between the channel layer and the back-barrier layer.
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