http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015021615-A1

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filingDate 2013-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc1b9c0f7a10b1a61838247c86408fd2
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publicationDate 2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015021615-A1
titleOfInvention Junction barrier schottky diode and manufacturing method thereof
abstract The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on or above the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112133761-A
priorityDate 2013-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 40.