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publicationDate 2015-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015017790-A1
titleOfInvention Method for manufacturing semiconductor device
abstract A method for manufacturing a semiconductor device includes: preparing a Si substrate having a flat portion with flat front and back surfaces and a bevel portion located at a periphery of the flat portion; forming a III-V nitride semiconductor film on the front surface of the Si substrate by epitaxial growth; and after forming the III-V nitride semiconductor film, grinding the Si substrate from the back surface. Amounts of working at the bevel portion on the front surface and the back surface of an outermost end portion of the bevel portion are asymmetrical. A first thickness measured from the front surface of the flat portion to the outermost end portion is smaller than a second thickness measured from the back surface of the flat portion to the outermost end portion.
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