| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c97f90ab12b35b650d5fd039ed7a41a5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-0806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-08755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-0825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-08711
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-08728
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-08797
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G9-08795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G9-087 |
| filingDate |
2014-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbcd265eee51a505301e3c681b468fa9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa7b76478301d94927034746e759406a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311b3d3b483cb5eb4f7313f1a1ca995f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6284a33afd2f3ee3e6a629c94a9ff62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5bb68e833397bd3741d7230760401c3 |
| publicationDate |
2015-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015017584-A1 |
| titleOfInvention |
Toner for electrostatic image development |
| abstract |
Provided is a toner for electrostatic image development that has good low-temperature fixability, also has long-term heat-resistant storage stability and can form an image with unevenness in gloss suppressed. The toner for electrostatic image development includes toner particles. The toner particles have a domain-matrix structure in which a first domain phase including a crystalline polyester resin A and a second domain phase including a crystalline polyester resin B are dispersed in a matrix phase including a vinyl resin. The average diameter of the first domain phase is 400 to 900 nm, and the average diameter of the second domain phase is 10 to 200 nm. The melting point of the crystalline polyester resin A and the melting point of the crystalline polyester resin B are each 95° C. or lower. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9829816-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015370189-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016180912-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016180911-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017090791-A |
| priorityDate |
2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |