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publicationDate 2015-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015008952-A1
titleOfInvention Photoluminescence mapping of passivation defects for silicon photovoltaics
abstract Methods for fast and accurate mapping of passivation defects in a silicon wafer involve capturing of photoluminescence (PL) images while the wafer is moving, for instance, when the wafer is transported on a belt in a fabrication line. The methods can be applied to in-line diagnostics of silicon wafers in solar cell fabrication. Example embodiments include a procedure for obtaining the whole wafer images of passivation defects from a single image (map) of photoluminescence intensity, and can provide rapid feedback for process control.
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