| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d6f87796c0d40ac4952c08af4089e1c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| filingDate |
2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e13456ed47cb041de1b7ddca0ebd6c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5391dfc297308ea66200fb0038f0119c |
| publicationDate |
2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015004775-A1 |
| titleOfInvention |
Semiconductor nanocrystals, methods for preparing semiconductor nanocrystals, and products including same |
| abstract |
Disclosed is a method for preparing a semiconductor nanocrystal, comprising: forming a reaction mixture comprising injecting one or more first semiconductor nanocrystal precursors including one or more Group V elements and one or more Group VI elements into a mixture including one or more second semiconductor nanocrystal precursors including one or more Group II elements and one or more Group III elements at a first temperature; and reacting the first and second semiconductor nanocrystal precursors in the reaction mixture at a second temperature for a period time sufficient to form a semiconductor nanocrystal core comprising at least a portion of the one or more Group II elements, one or more Group III elements, one or more Group V elements, and one or more Group VI elements included in the first and second semiconductor nanocrystal precursors, wherein the second temperature is greater than the first temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10975299-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11643597-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748096-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079328-B2 |
| priorityDate |
2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |