http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015001988-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af37a31cf4803cd2f4822908ce4bd0ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d1bacc06f2553c831235e1e703fd0f2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21H1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21H1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2014-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be7823ad771e5e32ca4ecd3120748744 |
| publicationDate | 2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2015001988-A1 |
| titleOfInvention | Tritium direct conversion semiconductor device having increased active area |
| abstract | A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538601-B2 |
| priorityDate | 2013-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.