http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015001588-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_faf522b8b83eded745c73018576219ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02496
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
filingDate 2013-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d2d01aacd88a33a900a4fdcc98ac146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_014781c2e7baeccc189be147872b4d41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42bc3d6354d946c135b61aad7831609f
publicationDate 2015-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015001588-A1
titleOfInvention Semiconductor device and method for manufacturing same
abstract A trench 107 is coated and sealed with a cap film 111 from above an amorphous or polycrystalline InP film 109 A buried in the trench 107. Next, a monocrystalline InP film 109 B is formed by monocrystallizing the InP film 109 A, with a Si (001) plane of the bottom of the trench 107 as a seed crystal plane, by melting InP by heating a Si wafer W at or above a melting point of InP and then solidifying InP by cooling InP.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299587-B2
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priorityDate 2012-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011263108-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012001283-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009065047-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7777250-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009042344-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8313967-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419521669
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3468413
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123165
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453889315
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID76919
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414678025
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID21922530
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448063853
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID19602282
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518864
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID91307
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129899426

Total number of triples: 74.