abstract |
A trench 107 is coated and sealed with a cap film 111 from above an amorphous or polycrystalline InP film 109 A buried in the trench 107. Next, a monocrystalline InP film 109 B is formed by monocrystallizing the InP film 109 A, with a Si (001) plane of the bottom of the trench 107 as a seed crystal plane, by melting InP by heating a Si wafer W at or above a melting point of InP and then solidifying InP by cooling InP. |