| abstract |
A method for fabricating a semiconductor device includes forming an isolation feature in a substrate, forming a gate stack over the substrate, forming a source/drain (S/D) recess cavity in the substrate, where the S/D recess cavity is positioned between the gate stack and the isolation feature. The method further includes forming an epitaxial (epi) material in the S/D recess cavity, where the epi material has an upper surface which including a first crystal plane. Additionally, the method includes performing a redistribution process to the epi material in the S/D recess cavity using a chlorine-containing gas, where the first crystal plane is transformed to a second crystal plane after the redistribution. |