http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014367750-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e41651508566f0385833e1ba14a21ffd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-30 |
| filingDate | 2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95baf629a87fed68d5c67bd756b4742b |
| publicationDate | 2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014367750-A1 |
| titleOfInvention | Ion-sensing charge-accumulation circuits and methods |
| abstract | An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10481123-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10386327-B2 |
| priorityDate | 2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.