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publicationDate 2014-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014361408-A1
titleOfInvention Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the czochralski method
abstract A method for controlling oxygen precipitation in a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided so that the wafer has uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. The single crystal silicon wafer comprises an additional dopant selected from among carbon, arsenic, and antimony.
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