| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e20ddfa0f5e8a6d89168a49ce5483f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3c7ba58efcc5671c5ef240da530b072 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2012-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a02ab737e31ddfd6d709ed3165cd3d74 |
| publicationDate |
2014-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014361374-A1 |
| titleOfInvention |
High-voltage transistor device and production method |
| abstract |
The high-voltage transistor device has a p-type semiconductor substrate ( 1 ) that is furnished with a p-type epitaxial layer ( 2 ). A well ( 3 ) and a body region ( 4 ) are located in the epitaxial layer. A source region ( 5 ) is arranged in the body region, and a drain region ( 6 ) is arranged in the well. A channel region ( 7 ) is located in the body region between the well and the source region. A gate electrode ( 8 ) is arranged above the channel region. In the part of the semiconductor substrate and the epitaxial layer underneath the source region and the channel region, a deep body region ( 11 ) is present, which has a higher dopant concentration in comparison to the remainder of the semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899484-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510847-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10985245-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186589-B2 |
| priorityDate |
2011-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |