| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e318d83ded14b10b64bc70bf58a9bba9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77ed71814db62712a7c0bed69581e8a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc00b4f7c239be441b651d8140f5bdef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48de15cdcf3ac1a0682f5b1df462754b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b38a9da0c44957b5f516100a5c0643d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_580805d3e8d410abcfe372ad7cfea521 |
| publicationDate |
2014-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014361310-A1 |
| titleOfInvention |
Semiconductor structure and method of forming the same |
| abstract |
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is over the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located at an interface of the first III-V compound layer and the second III-V compound layer. A dielectric cap layer is over the second III-V compound layer and a protection layer is over the dielectric cap layer. Slanted field plates are in a combined opening in the dielectric cap layer and protection layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7258855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021507501-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106847895-A |
| priorityDate |
2012-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |