| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61976898812a4c58b578eead9b8635b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb37eb6d913e573a50e09474d29070e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_639f37a952e37f0b8470de5c4cb39249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ccc837566f72dc6f52c4511aab0b800
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be90be2f10647d5dcc2ad7af1c004f94 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-2493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0912
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N99-002 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24 |
| filingDate |
2014-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9be68a5c16dbc876d78a18507fdb788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d63374df254bbe9b9c41139d0fa12fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0734da2207f36664c1b822b24864d4a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb43fc4127fd914b0374591fa9ec400c |
| publicationDate |
2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014357493-A1 |
| titleOfInvention |
Quantum bits and methods of forming the same |
| abstract |
A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019125498-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017217961-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019117975-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I764798-B |
| priorityDate |
2011-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |