| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dd3d14fadb8ed08a6069741188a22ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faf4bc7e129108f2a9c868ac0399fcdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06ed62307c64e7a6736737ec99b19767 |
| publicationDate |
2014-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014342534-A1 |
| titleOfInvention |
Method and apparatus for forming amorphous silicon film |
| abstract |
A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014187024-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263256-B2 |
| priorityDate |
2011-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |