| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6bd4aa3e5ceee9c096a9baeb594fcb7 |
| publicationDate |
2014-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014342533-A1 |
| titleOfInvention |
Method of strain and defect control in thin semiconductor films |
| abstract |
A method of managing strain and preventing defect formation in semiconductor materials is described. In structures featuring two or more semiconductor materials with different lattice constants, buffer layers may be used to form deposition surfaces that result in defect-free semiconductor devices. The buffer layers typically have compositions, and lattice constants, intermediate between the two semiconductor materials. The buffer layers may have stepped or graded composition, and multiple buffer layers may be used. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017111791-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243063-B2 |
| priorityDate |
2013-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |