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publicationNumber US-2014339549-A1
titleOfInvention Semiconductor Device and Method for Manufacturing the Same
abstract A first trench and a second trench are formed in an insulating layer, a transistor including an oxide semiconductor layer in the first trench is formed, and a capacitor is formed along the second trench. A first gate electrode is formed over the first trench, and a second gate electrode is formed under the first trench.
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