http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014314652-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ddb9f3656270bc5410be3679322fead |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-767 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-76 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-583 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-064 |
filingDate | 2012-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54805579b548e3686439be6912350aac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3380d33b7fb1c9a4cb4e925a4c6c982 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbee9d7ccebcd03a0a407cb412e9465e |
publicationDate | 2014-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2014314652-A1 |
titleOfInvention | Process for continuous production of boron nitride powder |
abstract | The present invention provides a process for continuously producing crystalline hexagonal boron nitride powder having a large particle size and high crystalline. The present invention relates to a process comprising: the first step of heating a boron-containing material and a nitrogen-containing material to obtain crude boron nitride powder having boron nitride content of 80% by weight or higher, and the second step of feeding the crude boron nitride powder and a boron-containing flux component in the content satisfying the following formula (1) with a heat-resistant container, and heating the container including the crude boron nitride powder and the boron-containing flux component at 1550 to 2400° C. in a continuous furnace under the atmosphere of nitrogen gas, to grow hexagonal boron nitride in the form of crystal: formula (1): boron content contained in boron-containing flux component/crude boron nitride content ≦1.4 % by weight. |
priorityDate | 2011-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.