| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2014-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b0f05279b96341768130742ec03d63a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ccc37c5b72c5919a060a22e36be462f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_437d14690895e9f410586b0516cdee8c |
| publicationDate |
2014-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014295665-A1 |
| titleOfInvention |
Method for removing native oxide and associated residue from a substrate |
| abstract |
Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH 3 ) and nitrogen trifluoride (NF 3 ) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH 4 ) 2 SiF 6 ), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF 4 ) and lifting off residues of the thin film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019099186-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020101806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10586707-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016020071-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916407-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020040464-A1 |
| priorityDate |
2012-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |