Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3279 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-443 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3227 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1225 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-24 |
filingDate |
2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39484a3a19f976aec5b46fadbba446af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a6eeccabdacf5b65a03b44b22eeba04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8bf49d5b78bfca08a668c2efced2ed1 |
publicationDate |
2014-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014287136-A1 |
titleOfInvention |
LaNiO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LaNiO3 THIN FILM USING THE SAME |
abstract |
This LaNiO 3 thin film-forming composition includes: LaNiO 3 precursors; and acetic acid, wherein a ratio of an amount of the LaNiO 3 precursors to 100 mass % of an amount of the LaNiO 3 thin film-forming composition is in a range of 1 mass % to 20 mass % in terms of oxides, and the composition further includes a stabilizer containing N-methyl formamide in an amount of more than 0 mol to 10 mol or less per 1 mol of the total amount of the LaNiO 3 precursors in the composition. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114231951-A |
priorityDate |
2013-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |