| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0749dd1196065a3202ccc2fbf41894cd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-95 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate |
2014-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d26f76f241bbac96e0b6855a20d6ee31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e286861a92b81dfba29fbc6453f179ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0043de71ec28594a9c3e482dbffaf2ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d94b3f94f7c9392ce31654686ff0002 |
| publicationDate |
2014-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014284551-A1 |
| titleOfInvention |
Nanowire LED Structure with Decreased Leakage and Method of Making Same |
| abstract |
A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support, and an insulating mask layer located over the support. The nanowire cores include semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer. The device also includes a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, a first electrode layer that contacts the second conductivity type semiconductor shells and extends into spaces between the semiconductor shells, and an insulating layer located between the insulating mask layer and the first electrode in the spaces between the semiconductor shells. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076945-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362448-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014117401-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9231161-B2 |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |