http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014273362-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b891d7047b60d158da3c92714bea08d6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1362 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2012-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5643451618abf4396535b95d30524a1b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98df9c16ca33ae77cad6bd0ff0ab9238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eec3aef4ae32667e2f4442fa3ce88dd9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_427d279d6dccadccb98b8de4e67fe971 |
| publicationDate | 2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014273362-A1 |
| titleOfInvention | Method for manufacturing thin film transistor and array substrate |
| abstract | The embodiments of the present invention provide a method for manufacturing a thin film transistor and a method for manufacturing an array substrate. The method for manufacturing the thin film transistor comprises: forming a gate electrode on a transparent substrate; forming a gate insulation layer; forming a transparent semiconductor film and patterning the transparent semiconductor film to form a semiconductor layer with photoresist being remained over the semiconductor layer; from a side of the transparent substrate opposite to the side on which the gate electrode is formed, exposing and developing the remained photoresist by using the gate electrode as a mask to form a channel position photoresist part corresponding to the gate electrode; forming a source/drain metal film and lifting off the channel position photoresist part and the source/drain metal film located over the channel position photoresist part; and patterning the remained source/drain metal film to form a source electrode and a drain electrode. The embodiments of the present invention are suitable to manufacture the product or device containing thin film transistors. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727307-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10340354-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018122914-A1 |
| priorityDate | 2012-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.