| abstract |
A semiconductor structure is provided including a transistor, the transistor including one or more elongated semiconductor regions, each of the one or more elongated semiconductor regions having a channel region, a gate electrode, wherein the gate electrode is provided at least at two opposite sides of each of the one or more elongated semiconductor regions, and a layer of a stress-creating material, the stress-creating material providing a variable stress, wherein the layer of stress-creating material is arranged to provide a stress at least in the channel region of each of the one or more elongated semiconductor regions, the stress provided in the channel region of each of the one or more elongated semiconductor regions being variable. |