| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f47985b7c371b565f319708450999686 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0266 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da3d9e9b12e4d62b96728fc3b7558713 |
| publicationDate |
2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014264520-A1 |
| titleOfInvention |
Integrated circuit structure and method for protection from damage to gate dielectric |
| abstract |
An integrated circuit device comprises a common-gated dual-oxide MOSFET including a protective device and a MOSFET. A common gate electrode serves as a gate electrode of the protective device and as a gate of the MOSFET. The protective device comprises a first gate dielectric having a first thickness over a first channel region and the MOSFET comprises a second gate dielectric thicker than the first gate dielectric over a second channel region. During a plasma process, a first current can flow through the first dielectric that is higher than a second current through the second dielectric. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11637077-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017201249-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741707-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023187177-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023284020-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017004887-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9922721-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3971971-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741706-B2 |
| priorityDate |
2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |