http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014264366-A1

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filingDate 2014-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_093697912695a8bd200603d75e154c68
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publicationDate 2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014264366-A1
titleOfInvention Semiconductor apparatus and method of manufacturing the same
abstract A semiconductor apparatus includes a semiconductor substrate that has a diameter of 2 inches or larger, and an N-type semiconductor layer that is stacked on the semiconductor substrate using a material including gallium nitride (GaN). A median of a plurality of measured values of the concentration of carbon (C) at a plurality of locations on a face of a region of the N-type semiconductor layer is equal to or lower than 1.0×10 16 cm −3 . The maximum value in difference between the median and the other measured values is lower than 5×10 15 cm −3 .
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015243736-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026851-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184244-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017256657-A1
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Total number of triples: 30.