| abstract |
A semiconductor device includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, a first insulation layer formed on the second semiconductor layer, the first insulation layer being formed of a material that includes SiO 2 , a second insulation layer formed on the first insulation layer, the second insulation film being formed of a material that includes one or more selected from Al 2 O 3 , ZrO 2 , Ta 2 O 5 , Ga 2 O 3 , and HfO 2 , and a gate electrode formed on the second insulation layer. |