| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_381c1d278c32eab473ba7161b9a6b1e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c85d78c6a4459b5dbbc49c82a4c5c107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bda23d167334578896e1ace8a9ee530a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e8dc0093b9a2004db0b33da4f4895e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_78f95bc96fc6ba005a79fba8adcb3850
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bd463c86eed6ec3317432f862a5a1143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268b29810d5e6bc8cf157e4ebbc8ae8a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L63-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L63-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-06 |
| filingDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1f33cd434ccbc8e59945169dde0d663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e05cd5e615f20fc31d32c7284e4d50fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06ec858d4ac36bb78e2a5a4113ea9d53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8d30af21abcb8e44e75d479a840e194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_621f72dc0274c3c5125deb749eec3cd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad5a6a6cc9151d7228aba570fbaa46f4 |
| publicationDate |
2014-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014256856-A1 |
| titleOfInvention |
Liquid epoxy resin formulations |
| abstract |
A liquid epoxy resin composition having a reduced tendency to crystallize including at least one liquid epoxy resin having the following generic chemical Structure (I): where n is 0 or an integer of 1 or more; and wherein n=0 is in the range of between about 1 wt % and about 90 wt %; wherein; n=1 is in the range of between about 7 wt % and about 20 wt %; n=2 is in the range of between about 0.8 wt % and about 3 wt %; and n=3 and above is in the range of about 0 wt % and about 2 wt %. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111094383-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11332571-B2 |
| priorityDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |