| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2013-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89693799641378f0306740c76db8ee1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81e8f5dbdeac3f9a73778b1f45310a1b |
| publicationDate |
2014-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014252620-A1 |
| titleOfInvention |
Material and process for copper barrier layer |
| abstract |
A method of fabricating a semiconductor device comprises forming a first dielectric material layer on a semiconductor substrate. The first dielectric material layer is patterned to form a plurality of vias therein. A metal layer is formed on the first dielectric material layer, wherein the metal layer fills the plurality of vias. The metal layer is etched such that portions of the metal layer above the first dielectric material layer are patterned to form a plurality of metal features aligned with the plurality of vias respectively. A self-assembled monolayer film is formed on surfaces of the plurality of metal features. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186453-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016268208-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021217798-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133178-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437488-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016365315-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018033723-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510546-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015279733-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293365-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347495-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106206690-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9478626-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488856-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016155664-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I573263-B |
| priorityDate |
2013-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |