| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2013-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_208747162b61ecef4aa3f67b569d235a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc5d875dc22c053de9829a3fb5d87b21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a0ea3a0d413dcf27e668d33f5367c46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5c2dc09b64592f9776bb133ffc2161 |
| publicationDate |
2014-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014252500-A1 |
| titleOfInvention |
Sacrificial replacement extension layer to obtain abrupt doping profile |
| abstract |
At least one gate structure having a first spacer located on a vertical sidewall thereof is provided on an uppermost surface of a semiconductor substrate. Exposed portions of the semiconductor substrate are then removed utilizing the at least one gate structure and first spacer as an etch mask. A sacrificial replacement material is formed on each recessed surface of the semiconductor substrate. Next, a second spacer is formed contacting the first spacer. Source/drain trenches are then provided by removing exposed portions of the sacrificial replacement material and an underlying portion of the semiconductor substrate. Remaining sacrificial replacement material located beneath the second spacer is removed providing an opening beneath the second spacer. A doped semiconductor material is formed within the source/drain trenches and the opening. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217707-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103224-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633857-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017288015-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107424918-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3047352-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497627-B2 |
| priorityDate |
2013-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |