http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014241085-A1

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filingDate 2013-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afae695b4eeb4c99ab2375b134442b80
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publicationDate 2014-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014241085-A1
titleOfInvention Semiconductor memory device for performing disable operation using anti-fuse and method thereof
abstract A semiconductor memory device for performing a disable operation using an anti-fuse, and method thereof are provided. The semiconductor memory device according to an example embodiment includes a fuse circuit including at least one anti-fuse configured to store fuse data, a memory circuit configured to at least one of read data stored in a memory cell and write data to the memory cell and a fuse controller configured to disable a read/write operation of the memory circuit based on the fuse data.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11015547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9824770-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381103-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056154-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601216-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10216932-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022083252-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165674-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10443531-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867692-B2
priorityDate 2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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