http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014231841-A1

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filingDate 2013-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014231841-A1
titleOfInvention Semiconductor light-emitting device and method of manufacturing the same
abstract A light-emitting device is disclosed including a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type; a first electrode connected to the lower layer of the first conductivity type; a second electrode connected to the upper layer of the second conductivity type. The light emitting structure is formed using a shell member, which comprises a planar portion and a shell portion. The extent of growth defects such as misfit dislocations is reduced and the extraction of light and heat is improved in the present device. The beam profile of the device may be altered by patterning the light emitting structure instead of shaping the entire chip. The device may be manufactured in a way more compatible with the established, cost-effective processing and packaging methods for large size wafers from the IC industry.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9660143-B2
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Total number of triples: 33.