http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014225194-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_090b32b53b36d3ea2696c4a94c371112 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2013-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1479cd51f9c69f053a1902030748660 |
| publicationDate | 2014-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2014225194-A1 |
| titleOfInvention | Oxide semiconductor thin film transistor and method for manufacturing the same |
| abstract | A method for manufacturing an oxide semiconductor thin film transistor (TFT) is provided, which includes the steps below. A source electrode and a drain electrode are provided. A patterned insulating layer is formed to partially cover the source electrode and the drain electrode, and expose a portion of the source electrode and a portion of the drain electrode. An oxide semiconductor layer is formed to contact the portion of the source electrode and the portion of the drain electrode. A gate electrode is provided. A gate dielectric layer positioned between the oxide semiconductor layer and the gate electrode is provided. An oxide semiconductor TFT is also provided herein. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064749-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022399470-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022077264-A1 |
| priorityDate | 2013-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.