| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1815 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate |
2014-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8032bf51c97d215cedf75bf1a84f8f5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_928ee3652cee9e1173a14783c422673c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0c7b529aee13489f10df10b47474005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1814269d715a8ccb9dd7e9274d60a0 |
| publicationDate |
2014-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014217357-A1 |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113363363-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9911381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9537051-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111326536-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9553234-B2 |
| priorityDate |
2013-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |