| abstract |
Provided is a photoelectric conversion device which includes a positive electrode, a negative electrode, a photoelectric conversion layer including poly-[N-9″-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] as a p-type organic semiconductor material and fullerene or a fullerene derivative as an n-type organic semiconductor material; and a buffer layer, provided between the positive electrode and the photoelectric conversion layer, including MoO 3 , in which device the proportion of the p-type organic semiconductor material in a first region being in contact with the buffer layer in the photoelectric conversion layer is higher than the proportion of the p-type organic semiconductor material in the entirety of the photoelectric conversion layer, and the proportion of the p-type organic semiconductor material in a second region on the negative electrode side than the first region in the photoelectric conversion layer is lower than the proportion of the p-type organic semiconductor material in the entirety of the photoelectric conversion layer. |