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filingDate 2013-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014208279-A1
titleOfInvention System and method of testing through-silicon vias of a semiconductor die
abstract A method includes contacting a first group of through-silicon vias (TSVs) contacts with a multi-contact probe and applying a first voltage value to each of the first group of TSV contacts via the multi-contact probe, where the first group of TSV contacts corresponds to a first group of TSVs. The method also includes determining, based on a second voltage value detected at a particular TSV of the first group of TSVs, whether the particular TSV corresponds to a TSV test result.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9641070-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9784790-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10401422-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10999922-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985336-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9563221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014168014-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104459420-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10769340-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017269150-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015362550-A1
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Total number of triples: 35.