| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23a4e0c875bf1ac2b8a3b76517de6c7d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2009-02314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-0072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-0015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-2463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72aa0bd7d5b3d8e47247e4e472ab29a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e906975f2f542ed69a0ae388191dd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d89e504460314503e032b3ccd43dadf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_433ef5e41f60b7b5e9c9c71d2764e42f |
| publicationDate |
2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014203796-A1 |
| titleOfInvention |
Nanoelectromechanical resonators |
| abstract |
A silicon device, e.g., a nanoelectromechanical resonator, has a silicon substrate; an oxide layer having a trench therein; a silicon device layer over the oxide layer; and a nanowire disposed at least partly over the trench. Substantially no oxide or polysilicon is over the nanowire in the trench. A polyimide layer over the silicon device layer includes an opening over the trench. A silicon device can include silicon-on-insulator layers and at least one complementary metal-oxide semiconductor transistor in addition to a nanowire substantially suspended over a trench. A system for measurement of a nanoresonator includes an AC source in series with the nanoresonator to provide an electrical signal thereto at a selected first frequency. Electrode(s) adjacent to and spaced apart from the nanoresonator are driven by voltage source. A detector detects a current through the nanoresonator. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015137068-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022337222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112326768-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109065665-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9397285-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411551-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757428-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10858244-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017098638-A1 |
| priorityDate |
2012-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |